Oclaro

100G Coherent CFP2

10G Tunable XFP

10G Tunable SFP+

100G Modulators

Tunable Lasers

  • Dual micro-ITLA
    LambdaFLEX Dual Micro-ITLA Tunable Laser
  • micro-iTLA
    LambdaFLEX Micro-iTLA Tunable Laser
  • TL5000DCJ
    LambdaFLEX™ iTLA TL5000 Integrated Tunable Laser Assembly - C Band, Constant Output Power
  • TL5000DLJ
    LambdaFLEX™ iTLA TL5000 Integrated Tunable Laser Assembly - L Band, Constant Output Power
  • TL5000VCJ
    LambdaFLEX™ iTLA TL5000 Integrated Tunable Laser Assembly - C Band, Variable Output Power
  • TL5300 Series
    LambdaFLEX Micro-iTLA Tunable Laser
  • TL5350 Series
    LambdaFLEX Micro-iTLA Tunable Laser

40G Modulators

20G Modulators

10G Modulators

  • Powerbit F10
    10-12.5 Gb/s Intensity Modulator - Low Drive Voltage

10G APD Chips

  • PA006700
    10Gb/s Avalanche Photodiode (APD) chip
  • PA009211
    10Gb/s Avalanche Photodiode (APD) chip
  • PA013595
    10Gb/s Avalanche Photodiode (APD) chip

100G CFP Client/Datacom

100G CFP2 Client/Datacom

  • 100G CFP2 LR4
    100 Gb/s CFP2 MSA 1310nm LAN-WDM 10km Transceiver

100G CFP4 Client/Datacom

  • CFP4
    100 Gb/s CFP4 MSA 1310nm LAN-WDM 10km Transceiver

100G QSFP28 Client/Datacom

40G CFP Client/Datacom

40G QSFP+ Client/Datacom

10G SFP+ Client/Datacom

  • TRS2001Ex
    10Gb/s SFP+ Transceiver with 300m Reach
  • TRS5024Ex
    SFP+ 10 GbE LR MSA 1310 nm 10km Transceiver
  • TRS7050EN
    SFP+ 10 GbE ER MSA 1550 nm 40km Transceiver

10G SFP+ Wireless

10G XFP Client/Datacom

  • TRF2001EN
    XFP 850 nm Wavelength 10Gbit/s Serial Transceiver
  • TRF5015
    XFP 1310 nm Wavelength 10Gbit/s Serial Transceiver
  • TRF5016
    XFP 1310 nm Wavelength 10Gbit/s Serial Transceiver
  • TRF7053
    XFP 1310 nm Wavelength 10Gbit/s Serial Transceiver

10G XMD Photodetectors

PA009211

PA009211

10Gb/s Avalanche Photodiode (APD) chip

Description

The Oclaro APD chip is an Indium Phosphide (InP) based device designed for high performance telecoms receiver applications up to 11.3Gb/s. The optical signal is received via top illumination of the central active region through a ring shaped contact which provides a 30μm aperture.

A reverse electrical bias is applied across the active region by the P (anode) and N (cathode) contacts. The circular P bond pad has a diameter of 70μm suitable for wirebonding.

The APD is suitable for operation at up to 11.3Gb/s at a multiplication gain factor between M3 and M10.

Applications

Single mode Datacom and telecom optical receivers

Features

Top illumination 30μm aperture
High bandwidth
Excellent responsivity
0.2pF capacitance
Top side wirebond pads
Optimised for epoxy attach
-5 to +85°C operation

All 10G APD Chips

Product Name Description
PA006700 10Gb/s Avalanche Photodiode (APD) chip
PA013595 10Gb/s Avalanche Photodiode (APD) chip