Oclaro

100GbE Coherent CFP2

10GbE Tunable XFP

10GbE Tunable SFP+

  • 10GbE Tunable SFP+
    10Gbp/s C-band C-temp Tunable DWDM Zero Chirp 40 km Transceiver, available in C-temp and E-temp.
  • 10GbE Tunable SFP+
    10Gbp/s C-band Tunable DWDM Negative Chirp 80 km Transceiver, available in C-temp, E-temp and I-temp

Coherent Components

10GbE SFP+ TOSA

100GbE Modulators

Tunable Lasers

40GbE Modulators

20GbE Modulators

10GbE Modulators

  • Powerbit F10
    10-12.5 Gb/s Intensity Modulator - Low Drive Voltage

400GbE Transceivers

25GbE SFP28 Client/Datacom

100GbE CFP2 Client/Datacom

100GbE CFP4 Client/Datacom

100GbE QSFP28 Client/Datacom

10GbE SFP+ Client/Datacom

10GbE SFP+ Wireless

DML Lasers

  • 10G CWDM DFB
    10Gb/s DFB Chip (Bare Die) 1271/1291/1311/1331nm
  • 1270nm High Power
    10Gb/s DFB Chip (Bare Die)
    10GPON ONU 1270nm
  • 25G CWDM DFB
    25Gb/s DFB Chip (Bare Die)
    1271/1291/1311/1331nm
    20 to 65degC"
  • 25G CWDM DFB
    25Gb/s DFB Chip (Bare Die)
    1271/1291/1311/1331nm
    -5 to 85degC
  • 25G TDM DFB
    25Gb/s DFB Chip (Bare Die)
    1300+/-15nm
    I-Temp -40 to 95degC

EML Lasers

Products > DWDM Transmission > Components > 10GbE APD Chips > 10Gb/s Avalanche Photodiode (APD) chip
10Gb/s Avalanche Photodiode (APD) chip

10Gb/s Avalanche Photodiode (APD) chip

PA006700

Description

The Oclaro APD chip is an Indium Phosphide (InP) based device designed for high performance telecoms receiver applications up to 11.3Gb/s. The optical signal is received via top illumination of the central active region through a ring shaped contact which provides a 30μm aperture.

A reverse electrical bias is applied across the active region by the P (anode) and N (cathode) contacts. The circular P bond pad has a diameter of 70μm suitable for wirebonding.

The APD is suitable for operation at up to 11.3Gb/s at a multiplication gain factor between M3 and M10.

Applications

Single mode Datacom and telecom optical receivers

Features

Top illumination 30μm aperture
High bandwidth
Excellent responsivity
0.2pF capacitance
Top side wirebond pads
Optimised for epoxy attach
-5 to +85°C operation

All 10GbE APD Chips

Product Name Description
10Gb/s Avalanche Photodiode (APD) chip PA009211